mixers - chip 3 3 - 1 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs general description features functional diagram input ip3: +20 dbm lo / rf isolation: 27 db passive: no dc bias required small size: 0.88 mm x 1.93 mm electrical specifi cations, t a = +25 c, lo drive = +14 dbm typical applications the hmc294 is ideal for: ? microwave point-to-point radios ? lmds ? satcom the hmc294 chip is a miniature passive gaas mmic double-balanced mixer which can be used as an upconverter or downconverter from 25 - 40 ghz in a small chip area of 1.70 mm 2 . excellent isolations are provided by on-chip baluns, which require no external components and no dc bias. all data is measured with the chip in a 50 ohm test fi xture connected via 0.076 mm (3 mil) gold ribbon of minimal length <0.31 mm (<12 mils). parameter min. typ. max. units frequency range, rf & lo 25 - 40 ghz frequency range, if dc - 2 ghz conversion loss 10 13 db noise figure (ssb) 10 13 db lo to rf isolation 22 27 db lo to if isolation 31 38 db rf to if isolation 27 33 db ip3 (input) 15 20 dbm ip2 (input) 24 35 dbm 1 db gain compression (input) 9 12 dbm hmc294 gaas mmic double-balanced mixer, 25 - 40 ghz v01.0300
mixers - chip 3 3 - 2 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs conversion gain vs. temperature @ lo = +14 dbm isolation @ lo = +14 dbm conversion gain vs. lo drive return loss @ lo = +14 dbm if bandwidth @ lo = +14 dbm upconverter performance conversion gain @ lo = +14 dbm -20 -15 -10 -5 0 20 25 30 35 40 -55 c +25 c +85 c conversion gain (db) frequency (ghz) -15 -10 -5 0 20 25 30 35 40 lo rf return loss (db) frequency (ghz) -20 -15 -10 -5 0 20 25 30 35 40 conversion gain (db) frequency (ghz) -20 -15 -10 -5 0 02468 if conversion gain if return loss if bandwidth if frequency (ghz) -20 -15 -10 -5 0 20 25 30 35 40 +8 dbm +10 dbm +12 dbm +14 dbm +16 dbm conversion gain (db) frequency (ghz) -50 -40 -30 -20 -10 0 20 25 30 35 40 rf/if lo/rf lo/if isolation (db) frequency (ghz) hmc294 gaas mmic double-balanced mixer, 25 - 40 ghz v01.0300
mixers - chip 3 3 - 3 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc294 gaas mmic double-balanced mixer, 25 - 40 ghz v01.0300 input ip3 vs. lo drive input ip3 vs. temperature @ lo = +14 dbm input ip2 vs. lo drive input ip2 vs. temperature @ lo = +14 dbm mxn spurious outputs input p1db vs. temperature @ lo = +14 dbm nlo mrf01234 0xx3.9 125047 2915986 3>11068105 4>110106 rf = 35 ghz @ -10 dbm lo = 34 ghz @ +14 dbm all values in dbc below the if power level. 6 8 10 12 14 16 20 25 30 35 40 -55 c +25 c +85 c input p1db frequency (ghz) 0 10 20 30 40 50 20 25 30 35 40 +8 dbm +10 dbm +12 dbm +14 dbm input ip2 (dbm) frequency (ghz) 5 10 15 20 25 30 20 25 30 35 40 -55 c +25 c +85 c input ip3 (dbm) frequency (ghz) 5 10 15 20 25 30 20 25 30 35 40 +8 dbm +12 dbm +10 dbm +14 dbm input ip3 (dbm) frequency (ghz) 0 10 20 30 40 50 20 25 30 35 40 -55 c +25 c +85 c input ip2 (dbm) frequency (ghz)
mixers - chip 3 3 - 4 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc294 gaas mmic double-balanced mixer, 25 - 40 ghz v01.0300 outline drawing absolute maximum ratings rf / if input +13 dbm lo drive +27 dbm storage temperature -65 to +150 c operating temperature -55 to +125 c notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004. 3. typical bond pad is .004 square. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads. % , % # 4 2 / 3 4 ! 4 ) # 3 % . 3 ) 4 ) 6 % $ % 6 ) # % / " 3 % 2 6 % ( ! . $ , ) . ' 0 2 % # ! 5 4 ) / . 3 die packaging information [1] standard alternate wp-4 [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
mixers - chip 3 3 - 5 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc294 gaas mmic double-balanced mixer, 25 - 40 ghz v01.0300 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm).
mixers - chip 3 3 - 6 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc294 gaas mmic double-balanced mixer, 25 - 40 ghz v01.0300 notes:
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